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hexfet ? power mosfet 10/09/00 parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 18 i d @ t c = 100c continuous drain current, v gs @ 10v 13 a i dm pulsed drain current ? 72 p d @t c = 25c power dissipation 150 w linear derating factor 1.0 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 247 mj i ar avalanche current ? 18 a e ar repetitive avalanche energy ? 15 mj dv/dt peak diode recovery dv/dt ? 8.1 v/ns t j operating junction and -55 to +175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torque, 6-32 or m3 srew ? 10 lbf?in (1.1n?m) absolute maximum ratings description v dss = 200v r ds(on) = 0.15 w i d = 18a s d g l advanced process technology l dynamic dv/dt rating l 175c operating temperature l fast switching l fully avalanche rated l ease of paralleling l simple drive requirements d 2 pak IRF640NS to-220ab irf640n to-262 irf640nl irf640n IRF640NS irf640nl fifth generation hexfet ? power mosfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the to-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. the low thermal resistance and low package cost of the to-220 contribute to its wide acceptance throughout the industry. the d 2 pak is a surface mount power package capable of accommodating die sizes up to hex-4. it provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. the d 2 pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0w in a typical surface mount application. the through-hole version (irf640nl) is available for low- profile application. www.irf.com 1 pd - 94006
www.irf.com 2 irf640n/s/l s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) ? CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC 1.3 v t j = 25c, i s = 11a, v gs = 0v ? t rr reverse recovery time CCC 167 251 ns t j = 25c, i f = 11a q rr reverse recovery charge CCC 929 1394 nc di/dt = 100a/s ? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) source-drain ratings and characteristics 18 72 a parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 200 CCC CCC v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.25 CCC v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance CCC CCC 0.15 w v gs = 10v, i d = 11a ? v gs(th) gate threshold voltage 2.0 CCC 4.0 v v ds = v gs , i d = 250a g fs forward transconductance 6.8 CCC CCC s v ds = 50v, i d = 11a ? CCC CCC 25 a v ds = 200v, v gs = 0v CCC CCC 250 v ds = 160v, v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 100 v gs = 20v gate-to-source reverse leakage CCC CCC -100 na v gs = -20v q g total gate charge CCC CCC 67 i d = 11a q gs gate-to-source charge CCC CCC 11 nc v ds = 160v q gd gate-to-drain ("miller") charge CCC CCC 33 v gs = 10v, see fig. 6 and 13 t d(on) turn-on delay time CCC 10 CCC v dd = 100v t r rise time CCC 19 CCC i d = 11a t d(off) turn-off delay time CCC 23 CCC r g = 2.5 w t f fall time CCC 5.5 CCC r d = 9.0 w , see fig. 10 ? between lead, CCC CCC 6mm (0.25in.) from package and center of die contact c iss input capacitance CCC 1160 CCC v gs = 0v c oss output capacitance CCC 185 CCC v ds = 25v c rss reverse transfer capacitance CCC 53 CCC pf ? = 1.0mhz, see fig. 5 nh electrical characteristics @ t j = 25c (unless otherwise specified) l d internal drain inductance l s internal source inductance CCC CCC s d g i gss ns 4.5 7.5 i dss drain-to-source leakage current thermal resistance parameter typ. max. units r q jc junction-to-case CCC 1.0 r q cs case-to-sink, flat, greased surface ? 0.50 CCC c/w r q ja junction-to-ambient ? CCC 62 r q ja junction-to-ambient (pcb mount) ? CCC 40
irf640n/s/l www.irf.com 3 0.01 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 175 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 4.0 5.0 6.0 7.0 8.0 9.0 10.0 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 18a fig 4. normalized on-resistance vs. temperature
www.irf.com 4 irf640n/s/l fig 7. typical source-drain diode forward voltage fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs. gate-to-source voltage 0.1 1 10 100 1000 0.1 1 10 100 1000 operation in this area limited by r ds(on) single pulse t t = 175 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms fig 7. typical source-drain diode forward voltage fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage 1 10 100 1000 v ds , drain-to-source voltage (v) 0 500 1000 1500 2000 2500 c, capacitance(pf) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd 0 20 40 60 80 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 11a v = 40v ds v = 100v ds v = 160v ds 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j
irf640n/s/l www.irf.com 5 r d fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms fig 11. maximum effective transient thermal impedance, junction-to-case v ds pulse width 1 s duty factor 0.1 % v gs r g d.u.t. 10v + - 25 50 75 100 125 150 175 0 4 8 12 16 20 t , case temperature ( c) i , drain current (a) c d fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms fig 11. maximum effective transient thermal impedance, junction-to-case v ds pulse width 1 s duty factor 0.1 % v gs r g d.u.t. 10v v dd 25 50 75 100 125 150 175 0 4 8 12 16 20 t , case temperature ( c) i , drain current (a) c d 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
www.irf.com 6 irf640n/s/l q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - 10 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 12c. maximum avalanche energy vs. drain current r g i as 0.01 w t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 175 0 100 200 300 400 500 600 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 4.4a 7.6a 11a
irf640n/s/l www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet ? power mosfets * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit ? ? ? r g v dd dv/dt controlled by r g driver same type as d.u.t. i sd controlled by duty factor "d" d.u.t. - device under test d.u.t circuit layout considerations low stray inductance ground plane low leakage inductance current transformer ? *
www.irf.com 8 irf640n/s/l lead assignments 1 - g ate 2 - dr ain 3 - source 4 - dr ain - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) min 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - a - 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0.36 (.014) m b a m 4 1 2 3 notes: 1 dimen sio ning & toler anc ing per ansi y14.5m, 1982. 3 o utline c o nf or ms to jedec o utline to -220ab. 2 co ntr olling dim en sio n : inc h 4 heatsin k & le ad measur em ents d o n ot include burrs. to-220ab part marking information to-220ab package outline dimensions are shown in millimeters (inches) part number international rectifier logo example : this is an irf1010 w ith assembly lot code 9b1m assembly lot code date code (yyw w ) yy = year ww = week 9246 irf1010 9b 1m a
irf640n/s/l www.irf.com 9 d 2 pak package outline d 2 pak part marking information 10.16 (.400) ref . 6.47 (.255) 6.18 (.243) 2.61 (.103) 2.32 (.091) 8.89 (.350) r ef. - b - 1.32 (.052) 1.22 (.048) 2.79 (.110) 2.29 (.090) 1.39 (.055) 1.14 (.045) 5.28 (.208) 4.78 (.188) 4.69 (.185) 4.20 (.165) 10.54 (.415) 10.29 (.405) - a - 2 1 3 15.49 (.610) 14.73 (.580) 3x 0.93 (.037) 0.69 (.027) 5.08 (.200) 3x 1.40 (.055) 1.14 (.045) 1.78 (.070) 1.27 (.050) 1.40 (.055) m ax. notes: 1 d im ens io n s after so ld er d ip. 2 dimensioning & tolerancing per ansi y14.5m, 1982. 3 controlling dimension : inch. 4 heatsink & lead dimensions do not include burrs. 0.55 (.022) 0.46 (.018) 0.25 (.010) m b a m minimum recommended footprint 11.43 (.450) 8.89 (.350) 17.78 (.700) 3.81 (.150) 2.08 (.082) 2x lead assignments 1 - g ate 2 - d rain 3 - so u rc e 2.54 (.100) 2x part number international rectifier logo date code (yyw w ) yy = year ww = week a ssem bly lot code f530s 9b 1m 9246 a
www.irf.com 10 irf640n/s/l to-262 part marking information to-262 package outline
irf640n/s/l www.irf.com 11 ? i sd 11a, di/dt 344a/s, v dd v (br)dss , t j 175c ? repetitive rating; pulse width limited by max. junction temperature. notes: ? starting t j = 25c, l = 4.2mh r g = 25 w , i as = 11a. ? pulse width 400s; duty cycle 2%. ? this is only applied to to-220ab package d 2 pak tape & reel information 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) m ax. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min . 30.40 (1.197) m ax . 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. ? this is applied to d 2 pak, when mounted on 1" square pcb ( fr-4 or g-10 material ). for recommended footprint and soldering techniques refer to application note #an-994. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir european regional center: 439/445 godstone rd, whyteleafe, surrey cr3 obl, uk tel: ++ 44 (0)20 8645 8000 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 (0) 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 011 451 0111 ir japan: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo 171 tel: 81 (0)3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 (0)838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673 tel: 886-(0)2 2377 9936 data and specifications subject to change without notice. 10/00

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